Monolithic integration of detectors and transistors on high-resistivity silicon
β Scribed by Gian-Franco Dalla Betta; Giovanni Batignani; Maurizio Boscardin; Luciano Bosisio; Paolo Gregori; Lucio Pancheri; Claudio Piemonte; Lodovico Ratti; Giovanni Verzellesi; Nicola Zorzi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 224 KB
- Volume
- 579
- Category
- Article
- ISSN
- 0168-9002
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β¦ Synopsis
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
π SIMILAR VOLUMES
We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kO cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiat