BJT-based detector on high-resistivity silicon with integrated biasing structure

✍ Scribed by G. Verzellesi; G. Batignani; S. Bettarini; M. Boscardin; L. Bosisio; G.-F. Dalla Betta; G. Giacomini; C. Piemonte

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 282 KB
• Volume: 567
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2006.05.096