## Abstract A new analytic model is presented (the model is based on the induced current density distribution inside silicon substrate) to calculate the frequency‐dependent distributed inductance and the associated distributed series resistance of silicon semiconducting VLSI interconnects. The vali
Frequency-dependent expressions for inductance and resistance of microstrip line on silicon substrate
✍ Scribed by H. Ymeri; B. Nauwelaers; Karen Maex; D. De Roest; S. Vandenberghe
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 308 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A new closed‐form expression to calculate frequency‐dependent distributed inductance and the associated distributed series resistance of microstrip lines on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self‐consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency‐dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD‐oriented equivalent‐circuit modeling approach. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 349–352, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10318
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