Processing and characterisation of PECVD silicon nitride films

✍ Scribed by Xiumiao Zhang; Koubao Ding; Ailing Yang; Diling Shao

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 268 KB
• Volume: 6
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199605)6:3<147::aid-amo227>3.0.co;2-g

✦ Synopsis

Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power density, 0.08-0.35 Wcm-'; (iii) NH,/SiH, flow ratio, 40:400-40: 1200 ml min-'. Fundamental properties of the Si-N films are characterised through elemental composition, chemical speciation, optical and electrical properties, all of which are dependent on the process parameters.