Processing and characterisation of PECVD
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Xiumiao Zhang; Koubao Ding; Ailing Yang; Diling Shao
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Article
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1996
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John Wiley and Sons
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English
β 268 KB
Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power