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Photo-processing of silicon nitride

✍ Scribed by V.K. Rathi; Manju Gupta; R. Thangaraj; K.S. Chari; O.P. Agnihotri

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
481 KB
Volume
266
Category
Article
ISSN
0040-6090

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Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power