Microstructural effects on properties and new processing techniques of Silicon Nitride. Part II: New processing techniques of silicon nitride

Remote plasma-enhanced CVD of silicon ni

Remote plasma-enhanced CVD of silicon nitride films: effects of diluting nitrogen with argon. Part II: effect of nitrogen plasma parameters on layer characteristics

✍ Sergei E. Alexandrov; Michael L. Hitchman; Alexei yu. Kovalgin 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 136 KB 👁 2 views

In Part I we reported the results of an emission spectroscopic study of the plasma obtained in an SiH 4 -N 2 -Ar mixture. It was shown that argon in metastable electronic excited states provides a high concentration of atomic nitrogen. In this part we report the results of a study of the influence o