𝔖 Bobbio Scriptorium
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Process modeling and simulation: boundary conditions for point defect-based impurity diffusion model

✍ Scribed by Taniguchi, K.; Shibata, Y.; Hamaguchi, C.


Book ID
119778161
Publisher
IEEE
Year
1990
Tongue
English
Weight
759 KB
Volume
9
Category
Article
ISSN
0278-0070

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A two-dimensional model of doping of the active regions in semiconductor devices by means of ion implantation and thermal annealing is stated and analyzed. Radiation enhanced diffusion of impurity atoms during high temperature implantation of hydrogen ions is also considered. An economic finite diff