✦ LIBER ✦
Simulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain
✍ Scribed by O.I Velichko; V.A Dobrushkin; A.N Muchynski; V.A Tsurko; V.A Zhuk
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 166 KB
- Volume
- 178
- Category
- Article
- ISSN
- 0021-9991
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✦ Synopsis
A two-dimensional model of doping of the active regions in semiconductor devices by means of ion implantation and thermal annealing is stated and analyzed. Radiation enhanced diffusion of impurity atoms during high temperature implantation of hydrogen ions is also considered. An economic finite difference method for solving the obtained system of diffusion equations is developed and numerical computations of the diffusion processes are carried out.