✦ LIBER ✦

Process-induced distortion in silicon wafers

✍ Scribed by Yau, L.D.

Book ID: 114593105
Publisher: IEEE
Year: 1979
Tongue: English
Weight: 793 KB
Volume: 26
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1979.19597

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In-plane distortion in silicon wafers in

In-plane distortion in silicon wafers induced by a submicron CMOS process

✍ Venkat Raman Nagaswami 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 435 KB

Silicon wafer processing technique

✍ BD Williams 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 96 KB

Ultrasonic in-process measurement of sil

Ultrasonic in-process measurement of silicon wafer thickness

✍ M. Tsutsumi; Y. Ito; M. Masuko 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 352 KB

Process-induced stress and microcrack nu

Process-induced stress and microcrack nucleation in GaAs wafers

✍ Allan Ward; Robert W. Hendricks 📂 Article 📅 1998 🏛 Springer US 🌐 English ⚖ 839 KB

MODELING OF SILICON WAFER VIBRATION IN S

MODELING OF SILICON WAFER VIBRATION IN SEMICONDUCTOR PROCESS TOOLS

✍ E.R. Marsh; B.J. Maher; C.L. White 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 220 KB

An investigation of the behavior of bare, unprocessed silicon wafers during their loading and transport in wafer cassettes is documented. Semiconductor process tools can generate sufficient vibration to cause the current 200-mm diameter wafers to vibrate inside the cassettes leading to particle gene

Thermal distortion predictions of a sili

Thermal distortion predictions of a silicon wafer during exposure in a SCALPEL tool

✍ S. Gianoulakis; J. Liddle; S. Stanton; G. Gallatin 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 344 KB

Lucent Technologies Bell Laboratories is developing a projection electron lithography system known as SCAL-PEL for post-optical lithography. SCALPEL employs a full die area patterned mask and a 0.25 mm imaging sub-field which is electronically scanned to provide a 3 mm long "effective field" area. T