𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Process control of Si/SiGe heterostructures by X-ray diffraction

✍ Scribed by Tom Ryan

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
97 KB
Volume
4
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

✦ Synopsis

The introduction of a silicon-germanium epitaxial layer in the base of a bipolar transistor brings about significant gains in speed. SiGe heterojunction bipolar transistors (HBTs) are now challenging GaAs in its traditional stronghold of wireless communications. But this new process step introduces new requirements for control of the Ge content and profile. X-ray diffraction (XRD) has been extensively used to characterize SiGe during it's research and development phase but, until now, it was considered too difficult and time consuming for use in a production environment. Recent advances in analytical software, however, allow fast and reliable extraction of layer thickness, germanium content and grading profile. XRD process control tools are currently being installed in a number of SiGe fab lines.

πŸ“œ SIMILAR VOLUMES

High resolution X-ray diffraction analys
High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures
✍ Matyi, R. J. ;Jamil, M. ;Shahedipour-Sandvik, F. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 478 KB

## Abstract High resolution triple‐axis X‐ray diffraction has been used to characterize the effects of nitrogen ion implantation into thin (15 nm and 55 nm) AlN buffer layers on the resultant structural quality of nominally 2 ΞΌm epitaxial GaN layers grown on silicon substrates. The GaN symmetric (0