β Scribed by Dimitri A. Antoniadis (auth.), Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham (eds.)
No coin nor oath required. For personal study only.
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differΒ ent levels (government agencies, private industries, defense deΒ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of staΒ tistical fluctuations.
Front Matter....Pages I-XII
Diffusion in Silicon....Pages 1-47
Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices....Pages 48-87
The Use of Chlorinated Oxides and Intrinsic Gettering Techniques for VLSI Processing....Pages 88-124
Ion Implantation....Pages 125-179
Beam Annealing of Ion Implanted Silicon....Pages 180-209
Materials Characterization....Pages 210-263
Modeling of Polycrystalline Silicon Structures for Integrated Circuit Fabrication Processes....Pages 264-303
Two-Dimensional Process Simulation β Supra....Pages 304-342
Numerical Simulation of Impurity Redistribution Near Mask Edges....Pages 343-396
Optical and Deep UV Lithography....Pages 397-410
Wafer Topography Simulation....Pages 411-431
Analysis of Nonplanar Devices....Pages 432-489
Two Dimensional MOS-Transistor Modeling....Pages 490-581
Fielday β Finite Element Device Analysis....Pages 582-619
Circuits and Systems;Electrical Engineering
π SIMILAR VOLUMES
<span>Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Simulation tools were a research curiosity and in general were mistrusted by most designers and test engineers. In those days the programs were not user fri
<p>To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, a