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Preparation of silicon oxynitride (SiOxNy) thin films by pulsed laser deposition

✍ Scribed by Rong-Fu Xiao; Lun Chiu Ng; Chao Jiang; Z. Yang; George K.L. Wong


Book ID
107864871
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
480 KB
Volume
260
Category
Article
ISSN
0040-6090

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Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas