Preparation of aluminum thin films by the facing targets sputtering system

✍ Scribed by Toyoaki Hirata; Masao Nagakubo; Masahiko Naoe

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 383 KB
• Volume: 134
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(91)90969-t

✦ Synopsis

The facing targets sputtering (FTS) system, typical of plasma-free sputtering systems, was used to deposit aluminum thin films composed of very fine grains with a smooth surface, large hardness and low resistivity. When the argon gas pressure PAr was as low as 10-' Pa, the aluminum films deposited at a bias voltage to substrate V b of -40 V became smoother, more reflective and harder. The films deposited at a V b of -100 --160 V revealed a definite (111) orientation of the aluminum crystallites parallel to the film plane. The resistivity/9 of the films deposited at a PAr below 10 ' Pa was almost equal to that of bulk aluminum.