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Preparation of a novel gallium arsenide single-source precursor having the empirical formula AsCl3Ga2

✍ Scribed by Wells, Richard L.; Hallock, Robert B.; McPhail, Andrew T.; Pitt, Colin G.; Johansen, James D.


Book ID
125952056
Publisher
American Chemical Society
Year
1991
Tongue
English
Weight
313 KB
Volume
3
Category
Article
ISSN
0897-4756

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ChemInform Abstract: Deposition of Thin
✍ Graeme A. Horley; Mike R. Lazell; Paul O'Brien πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 33 KB πŸ‘ 2 views

Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt 2 ) 3 , by Aerosol-Assisted CVD. -The novel liquid gallium monothiocarbamato complex (III) is utilized as a single-source precursor for the deposition of face-centered cubic GaS films on glass substra