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Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

✍ Scribed by Ji-cheng ZHOU; Zhi-jie SHI; Xu-qiang ZHENG

Book ID
117693726
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
573 KB
Volume
19
Category
Article
ISSN
1003-6326

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## Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV–visible range. Single layers of tantalum nitride