Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects
✍ Scribed by Seol-Min Yi; Cheonman Shim; Han-Choon Lee; Jae-Won Han; Kee-Ho Kim; Young-Chang Joo
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 378 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface treatment, cleaning by plasma with vacuum break, cleaning by plasma without vacuum break and cleaning by the wet chemical method. SiN x and SiC were used to cap the surface after the post-CMP cleaning. The adhesion strength between Cu and the capping material was measured using a sandwiched structure constructed for the four point bending test. The X-ray photoemission spectroscopy analysis showed that the adhesion strength is related to the interfacial chemical bonds. The adhesion is influenced by the presence of contaminants and residual oxygen which inhibit the bonding of Si and Cu.