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Preparation and properties of heteroepitaxial GaP films on Si substrates

✍ Scribed by H.B Pogge; B.M Kemlage; R.W Broadie


Book ID
107862274
Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
204 KB
Volume
36
Category
Article
ISSN
0040-6090

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WANQ; KASANO). Heteroepitaxial layers grown on Al,O, and on Si show a variet y of structural imperfections caused by the differences in structural parameters between layer and substrate. KASANO investigated the influence of contaminations on the luminescence properties of GaP deposited on Ge. I n th