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Preparation and Structural Properties of GaP-Layers Grown on Ge-Substrates

✍ Scribed by Dr. J. Kies; Dr. W. Möhling; Dr. J. Noack

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
330 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis

WANQ; KASANO). Heteroepitaxial layers grown on Al,O, and on Si show a variet y of structural imperfections caused by the differences in structural parameters between layer and substrate. KASANO investigated the influence of contaminations on the luminescence properties of GaP deposited on Ge. I n the present paper crystallographic defects arising during layer growth of GaP on this material will be described.

Gap-layers were prepared by chemical transport reaction of GaP in an open system using HC1 as a transporting agent. Substrate slices were cut from

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Ge particles were successfully incorporated into MgF2 films by the multi source PVD technique. The dependence of the optical band gap energy Eg on Ge concentration in the MgF, matrix was investigated before and after annealing. In as-deposited films a strong increase of Es at low Ge concentrations p