Preparation and properties of Ge microcrystals in MgF2 layers

✍ Scribed by R. Thielsch; H. Böttcher

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 531 KB
• Volume: 189
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(92)85129-x

✦ Synopsis

Ge particles were successfully incorporated into MgF2 films by the multi source PVD technique. The dependence of the optical band gap energy Eg on Ge concentration in the MgF, matrix was investigated before and after annealing. In as-deposited films a strong increase of Es at low Ge concentrations points to the existence of a quantum-size effect. Annealing at 500°C yields enlarged Ge crystallites on a 10 nm scale connected with a decrease of E8 and a split of the energy dependence of the absorption constant indicating the coexistence of non-direct and direct electronic transitions.