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Preparation and properties of GaFeO3thin films grown at various oxygen pressures by pulsed laser deposition

✍ Scribed by Z.H. Sun; Y.L. Zhou; S.Y. Dai; L.Z. Cao; Z.H. Chen


Publisher
Springer
Year
2007
Tongue
English
Weight
367 KB
Volume
91
Category
Article
ISSN
1432-0630

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Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas