Zr-Al-O dielectric films have been deposited on Pt-coated silicon substrates and directly on n-type Si substrates, respectively, by pulsed laser deposition technique using a (ZrO ) (Al O ) ceramic target. The 2 0.5 2 3 0.5 Zr-Al-O films deposited in 20 Pa oxygen ambient at 300 8C substrate temperat
β¦ LIBER β¦
Dielectric properties of SrZrO3thin films prepared by pulsed laser deposition
β Scribed by X.B. Lu; G.H. Shi; J.F. Webb; Z.G. Liu
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 227 KB
- Volume
- 77
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Structure and dielectric properties of Z
β
J. Zhu; Z.G. Liu
π
Article
π
2003
π
Elsevier Science
π
English
β 147 KB
Ferroelectric and dielectric properties
β
X.S. Wang; Z.C. Wu; J.F. Webb; Z.G. Liu
π
Article
π
2003
π
Springer
π
English
β 766 KB
Ferrimagnetic thin films prepared by pul
β
M. Guyot; A. Lisfi; R. Krishnan; M. Porte; P. Rougier; V. Cagan
π
Article
π
1996
π
Elsevier Science
π
English
β 395 KB
ZnO thin films prepared by pulsed laser
β
M.G. Tsoutsouva; C.N. Panagopoulos; D. Papadimitriou; I. Fasaki; M. Kompitsas
π
Article
π
2011
π
Elsevier Science
π
English
β 487 KB
The dielectric properties of pulsed lase
β
S.M. He; D.H. Li; X.W. Deng; X.Z. Liu; Y. Zhang; Y.R. Li
π
Article
π
2003
π
Elsevier Science
π
English
β 340 KB
KTiOAsO4 Thin Films Prepared by Pulsed L
β
Yu Liao; Xiu Wang
π
Article
π
1999
π
John Wiley and Sons
π
English
β 37 KB
π 2 views
A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO 4 (KTA) at power densities of 0.6 to 2.0Γ10 9 W/cm 2 . KTA thin films were deposited on glass, Si (100). After proper annealing treatment, single phase, (orthorh-ombic) polycrystalline KTA thin films were obtained. Some propitious