## Abstract InAs coβdoped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using Xβray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest
β¦ LIBER β¦
Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition
β Scribed by X.S. Wang; Z.C. Wu; J.F. Webb; Z.G. Liu
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 766 KB
- Volume
- 77
- Category
- Article
- ISSN
- 1432-0630
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## Abstract Undoped and 0.56 at.% Sbβdoped ZnO thin films were prepared by pulsed laser deposition (PLD) under vacuum and an oxygen pressure of 0.2βPa with sintered ceramic as targets. The effects of Sb doping and deposition atmosphere on structure and opticalβelectrical properties of the films wer