## Abstract Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto singleβcrystal Si(001) substrates at an oxygen pressure of 2 Γ 10^β2^ mbar and substrate temperature of 600 Β°C. The targets used were high density Sn:ZnO pellets with different Sn concent
β¦ LIBER β¦
Growth of phosphorus doped ZnO thin films by pulsed laser deposition
β Scribed by Vaithianathan, Veeramuthu ;Lee, Byung-Teak ;Kim, Sang Sub
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 97 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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