𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Preparation and evaluation of nitrogen-terminated silicon nanoparticles: laser annealing effect

✍ Scribed by Cheow-Keong Choo; Takashi Sakamoto; Makoto Tohara; Katsumi Tanaka; Ryouhei Nakata; Naoki Okuyama

Book ID
117220230
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
246 KB
Volume
445
Category
Article
ISSN
0039-6028

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Laser annealing of nitrogen and oxigen i
Laser annealing of nitrogen and oxigen ion implanted silicon layers
✍ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini πŸ“‚ Article πŸ“… 1979 πŸ› Elsevier Science βš– 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of

Effect of thermal annealing and nitrogen
Effect of thermal annealing and nitrogen content on amorphous silicon thin-film crystallization
✍ Bouridah, H. ;Mansour, F. ;Mahamdi, R. ;Bounar, N. ;Temple-Boyer, P. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 388 KB

## Abstract We study the influence of high‐temperature annealing (1100–1200 Β°C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM