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Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O3 ferroelectric thick films

โœ Scribed by Sung-Gap Lee


Book ID
116601848
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
823 KB
Volume
454
Category
Article
ISSN
0925-8388

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โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct