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Preferential amorphisation of Ge nanocrystals in a silica matrix

✍ Scribed by M.C. Ridgway; G. de M. Azevedo; R.G. Elliman; W. Wesch; C.J. Glover; R. Miller; D.J. Llewellyn; G.J. Foran; J.L. Hansen; A. Nylandsted Larsen

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
207 KB
Volume
242
Category
Article
ISSN
0168-583X

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✦ Synopsis

Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose $40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.

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