Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix

✍ Scribed by Jie, Y. X.; Wu, X.; Huan, C. H. A.; Wee, A. T. S.; Guo, Y.; Zhang, T. J.; Pan, J. S.; Chai, J.; Chua, S. J.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 293 KB
• Volume: 28
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199908)28:1<195::aid-sia606>3.0.co;2-l

✦ Synopsis

Germanium nanocrystals immersed in amorphous SiO x matrix have been synthesized by r.f. co-sputter deposition of Ge and quartz with post-growth annealing at 600-900 °C. The structures of the Ge nanocrystals and SiO x matrix have been studied with x-ray diffraction, high-resolution transmission electron microscopy and XPS depth profiling. Broad-band photoluminescence spectra have been observed from samples annealed at temperatures higher than 600 °C. Possible photoluminescence mechanisms have also been discussed.