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Structural studies of Ge nanocrystals embedded in SiO2 matrix

✍ Scribed by N. Srinivasa Rao; S. Dhamodaran; A.P. Pathak; P.K. Kulriya; Y.K. Mishra; F. Singh; D. Kabiraj; J.C. Pivin; D.K. Avasthi

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
322 KB
Volume
264
Category
Article
ISSN
0168-583X

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✍ S.R.C. Pinto; A.G. Rolo; A. Chahboun; Maja Buljan; A. Khodorov; R.J. Kashtiban; πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 603 KB

In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing