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Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

✍ Scribed by S.R.C. Pinto; A.G. Rolo; A. Chahboun; Maja Buljan; A. Khodorov; R.J. Kashtiban; U. Bangert; N.P. Barradas; E. Alves; S. Bernstorff; M.J.M. Gomes

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
603 KB
Volume
87
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

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