In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 ยฐC to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing
โฆ LIBER โฆ
Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix
โ Scribed by E.M.F. Vieira; S.R.C. Pinto; S. Levichev; A.G. Rolo; A. Chahboun; M. Buljan; N.P. Barradas; E. Alves; S. Bernstorff; O. Conde; M.J.M. Gomes
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 588 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0167-9317
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