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Precision surface temperature measurement and film characterization for LICVD of a-Si: H from SiH4

✍ Scribed by K. Hesch; P. Hess; H. Oetzmann; C. Schmidt


Book ID
107925800
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
410 KB
Volume
36
Category
Article
ISSN
0169-4332

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A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good