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Power-amplifier design using negative-image device models

✍ Scribed by Nam-Tae Kim; Omar M. Ramahi

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
108 KB
Volume
47
Category
Article
ISSN
0895-2477

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✦ Synopsis

A novel design methodology for wireless power amplifiers is presented using negative-image device models that are applicable to GaAs FETs and other power devices. Negative-image device models of a power device are generated by incorporating hypothetical negativeimage matching networks and a load-line theory with optimization technique. The negative-image device-modeling methodology provides the following advantages in comparison to previously developed techniques: (i) it can predict achievable amplifier performance in the device-modeling stage; (ii) it provides an accurate starting point for the synthesis of impedance-matching networks; (iii) it can make use of widely available linear simulators. Descriptions of the negative-image device-modeling method and its application to the design of a high-power GaAs FET amplifier are presented. The experimental results of an implemented amplifier are given as a demonstration of the effectiveness of the proposed design methodology.

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