A novel design methodology for wireless power amplifiers is presented using negative-image device models that are applicable to GaAs FETs and other power devices. Negative-image device models of a power device are generated by incorporating hypothetical negativeimage matching networks and a load-lin
Frequency-multiplier design using negative-image device models
✍ Scribed by Nam-Tae Kim
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 430 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This article presents a novel design methodology for wireless frequency multipliers using negative‐image device models applicable to nonlinear devices. Negative‐image device models of nonlinear devices are generated by incorporating optimization techniques into a hypothetical negative‐image multiplier model. The negative‐image device‐modeling methodology provides the following advantages over previously developed techniques: (1) It can predict achievable multiplier performance in the device‐modeling stage and (2) it provides an accurate starting point for the synthesis of impedance‐matching networks. The negative‐image device‐modeling method is described, and its application to the design of a field‐effect transistor (FET) frequency multiplier is presented. Results of an experimental implementation of the multiplier demonstrate the effectiveness of the proposed methodology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2544–2548, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25521
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