The eect of dierent post-deposition treatments on the structure of Hot-Wire (HW) deposited intrinsic a-Si:H thin ยฎlms is investigated. These treatments are applied in order to rehydrogenate the top region of the ยฎlm, which, due to the high deposition temperatures of these ยฎlms, becomes depleted of h
โฆ LIBER โฆ
Post hydrogenation effect by hot wire method on poly-crystalline silicon based devices
โ Scribed by Kousaku Shimizu; Noriyoshi Kohama; Tadaaki Tani; Jun-ichi Hanna
- Book ID
- 116667747
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 284 KB
- Volume
- 338-340
- Category
- Article
- ISSN
- 0022-3093
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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not