The eect of dierent post-deposition treatments on the structure of Hot-Wire (HW) deposited intrinsic a-Si:H thin ยฎlms is investigated. These treatments are applied in order to rehydrogenate the top region of the ยฎlm, which, due to the high deposition temperatures of these ยฎlms, becomes depleted of h
โฆ LIBER โฆ
Effect of hot-wire passivation on the properties of hydrogenated microcrystalline silicon films to reduce post-deposition oxidation
โ Scribed by S. Mitsuhashi; A. Tabata; T. Mizutani
- Book ID
- 116669636
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 164 KB
- Volume
- 352
- Category
- Article
- ISSN
- 0022-3093
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