A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87
โฆ LIBER โฆ
Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films
โ Scribed by M. Zribi; M. Kanzari; B. Rezig
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 831 KB
- Volume
- 149
- Category
- Article
- ISSN
- 0921-5107
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