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Porous silicon films: Preparation and examination with surface and optical methods

✍ Scribed by R.W. Hardeman; M.I.J. Beale; D.B. Gasson; J.M. Keen; C. Pickering; D.J. Robbins


Publisher
Elsevier Science
Year
1985
Weight
66 KB
Volume
152-153
Category
Article
ISSN
0167-2584

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi