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Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD

✍ Scribed by Shiuan-Ho Chang; Yean-Kuen Fang; Shyh-Fann Ting; Chun-Yue Lin; Shih-Fang Chen; Hon Kuan; Chin-Yung Liang

Book ID
107453675
Publisher
Springer US
Year
2006
Tongue
English
Weight
205 KB
Volume
35
Category
Article
ISSN
0361-5235

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## Abstract In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metal‐organic chemical vapour deposition (MOCVD). __In situ__ curvature measurements, X‐ray diffraction (XRD) and transmission electr