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Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

✍ Scribed by I. P. Soshnikov; G. É. Cirlin; A. A. Tonkikh; V. N. Nevedomskiĭ; Yu. B. Samsonenko; V. M. Ustinov


Book ID
111445792
Publisher
SP MAIK Nauka/Interperiodica
Year
2007
Tongue
English
Weight
337 KB
Volume
49
Category
Article
ISSN
1063-7834

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✍ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob