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Polishing of diamond thick films by Ce at lower temperatures

✍ Scribed by Sun, Yujing; Wang, Shubin; Tian, Shi; Wang, Yihong

Book ID
123508174
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
558 KB
Volume
15
Category
Article
ISSN
0925-9635

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## Abstract Nanocrystalline diamond (NCD) films were grown by microwave plasma CVD in hydrogen‐based gas mixture. Deposition experiments were performed at different temperatures varying from 370 to 1100 Β°C. Before growth step, silicon (100) oriented substrates were nucleated by bias enhanced nuclea