Growth of nanocrystalline diamond films deposited by microwave plasma CVD system at low substrate temperatures
β Scribed by Potocky, S. ;Kromka, A. ;Potmesil, J. ;Remes, Z. ;Polackova, Z. ;Vanecek, M.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 346 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Nanocrystalline diamond (NCD) films were grown by microwave plasma CVD in hydrogenβbased gas mixture. Deposition experiments were performed at different temperatures varying from 370 to 1100 Β°C. Before growth step, silicon (100) oriented substrates were nucleated by bias enhanced nucleation procedure and glass substrates were pretreated in ultrasonic bath. Optical, structural and morphological properties of NCD films were systematically studied by using an optical spectroscopy, scanning electron microscopy and Raman spectroscopy. NCD films were optically transparent in wide range and had high refractive index of 2.34. All deposited samples exhibited diamond characteristic line in the Raman spectrum. The growth kinetic was attributed to the hydrogen abstraction model. (Β© 2006 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al