We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te
โฆ LIBER โฆ
Point defect engineering in preamorphized silicon enriched with fluorine
โ Scribed by G. Impellizzeri; S. Mirabella; F. Priolo; E. Napolitani; A. Carnera
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 234 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0168-583X
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