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Plasmon energy shift in porous silicon measured by x-ray photoelectron spectroscopy

✍ Scribed by Mannella, N.; Gabetta, G.; Parmigiani, F.

Book ID
120319794
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
320 KB
Volume
79
Category
Article
ISSN
0003-6951

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Overlayers of SiO 2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxi