Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy

✍ Scribed by T. Bekkay; K. Piyakis; Y. Diawara; E. Sacher; A. Yelon; J.F. Currie

• Book ID: 118364519
• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 649 KB
• Volume: 258
• Category: Article
• ISSN: 0039-6028
• DOI: 10.1016/0039-6028(91)90913-d