Plasmon-Assisted Chemical Vapor Deposition
β Scribed by Boyd, David A.; Greengard, Leslie; Brongersma, Mark; El-Naggar, Mohamed Y.; Goodwin, David G.
- Book ID
- 126884927
- Publisher
- American Chemical Society
- Year
- 2006
- Tongue
- English
- Weight
- 590 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1530-6984
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract As a variant of conventional CVD, AACVD involves atomization of a liquid precursor into fine aerosol droplets that are delivered to a heated zone where evaporation, decomposition, and subsequent CVD reactions occur. In this editorial, Guest Editor KwangβLeong Choy provides a brief overv
In order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to