Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

✍ Scribed by Kosuke Takenaka; Masaharu Shiratani; Masao Onishi; Manabu Takeshita; Toshio Kinoshita; Kazunori Koga; Yukio Watanabe

• Book ID: 104420642
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 261 KB
• Volume: 5
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(02)00108-7

✦ Synopsis

In order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to realize the anisotropic CVD. The anisotropy, which is a ratio of deposition rate at the bottom of a trench to that at its side wall, tends to increase with energy as well as flux of ions (H 3 + is the predominant ion) impinging on the substrate surface, while it does not depend on H flux. We demonstrate promising anisotropic filling of trenches by the anisotropic CVD method.