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Plasma-enhanced chemical vapour deposition of silicon dioxide using tetraethoxysilane as silicon source

โœ Scribed by W. Kulisch; T. Lippmann; R. Kassing

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
201 KB
Volume
174
Category
Article
ISSN
0040-6090

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Plasma-enhanced chemical vapour depositi
Plasma-enhanced chemical vapour deposition of fluorinated silicon dioxide films using novel alkylsilanes
โœ Ravi K. Laxman; Arthur K. Hochberg; David A. Roberts; Raymond N. Vrtis; Saul Ova ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 530 KB

Deposition processes and film properties of plasma-enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3-3.7) than non-fluorinated silicon dioxide films (>4). With similar diel