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Plasma deposition of Si3N4 layers

✍ Scribed by K.I. Kirov; S.S. Georgiev; B.G. Pantchev; J.B. Koprinarova

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
153 KB
Volume
71
Category
Article
ISSN
0040-6090

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Ion beam synthesis of Si3N4 amorphous buried layers
✍ A.I. Belogorokhov; A.B. Danilin; V.N. Mordkovich; O.I. Vyletalina πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 117 KB

It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N Γ· implantation with E--150 keV, β€’ ---5.0 Γ— 1017 N+cm 2 and TA = 1200 Β°C (2 h). To achieve this, preliminary implantation with E = 150 keV and β€’/> 5.0 x 1016 O + cm 2 has to be carried out. Radi