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Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes

โœ Scribed by D.L. Miller; P.M. Asbeck


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
367 KB
Volume
81
Category
Article
ISSN
0022-0248

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Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence